? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 30 a i dm t c = 25 c, pulse width limited by t jm 80 a i a t c = 25 c 30 a e as t c = 25 c 2 j p d t c = 25 c 540 w t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247&to-3p) 1.13/10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g to-268 4.0 g n-channel enhancement mode avalanche rated symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 300 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 240 m linear l2 tm power mosfet with extended fbsoa ixth30n60l2 ixtq30n60l2 IXTT30N60L2 ds100101(01/09) v dss = 600v i d25 = 30a r ds(on) 240m features z designed for linear operation z international standard packages z avalanche rated z molding epoxies meet ul 94 v-0 flammability classification z guaranteed fbsoa at 75 c applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators preliminary technical information g = gate d = drain s = source tab = drain to-247 to-3p d s g to-268 g s (tab) (tab) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth30n60l2 ixtq30n60l2 IXTT30N60L2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 10 14 18 s c iss 10.7 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 600 pf c rss 130 pf t d(on) 43 ns t r 65 ns t d(off) 123 ns t f 43 ns q g(on) 335 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 58 nc q gd 212 nc r thjc 0.23 c/w r thcs (to-247&to-3p) 0.25 c/w safe operating area specification symbol test conditions min. typ. max. soa v ds = 480v, i d = 0.6a, t c = 75c, t p = 3s 288 w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 30 a i sm repetitive, pulse width limited by t jm 120 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = i s , -di/dt = 100a/ s, v r = 100v 710 ns note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) to-3p (ixtq) outline e ? p 1 2 3 to-268 (ixtt) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved ixth30n60l2 ixtq30n60l2 IXTT30N60L2 fig. 1. output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 0123456 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 9v 7 v 5 v 6 v 8 v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 7 v 6 v 9 v 8 v fig. 3. output characteristics @ 125oc 0 3 6 9 12 15 18 21 24 27 30 012345678910111213 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 5 v 7v 6v 8 v fig. 4. r ds(on) normalized to i d = 15a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 30a i d = 15a fig. 5. r ds(on) normalized to i d = 15a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 1020304050607080 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixys ref: t_30n60l2(8r)01-20-09-a
ixys reserves the right to change limits, test conditions, and dimensions. ixth30n60l2 ixtq30n60l2 IXTT30N60L2 fig. 7. input admittance 0 5 10 15 20 25 30 35 40 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 320 360 400 440 480 q g - nanocoulombs v gs - volts v ds = 300v i d = 15a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved ixth30n60l2 ixtq30n60l2 IXTT30N60L2 ixys ref: t_30n60l2(8r)01-20-09-a fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
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